Rising edge delay cell for control circuits, 10ns - TSMC 180nm
Rising edge delay cell for control circuits, 10ns - TSMC 180nm
- TSMC
- 180nm
- BCDG2
- Silicon Proven
Semiconductor IP cores (Intellectual Property cores) are reusable design blocks used in SoC and ASIC development to accelerate time-to-market and reduce design complexity.
These IP cores span a broad range of technologies, including Analog & Mixed Signal, Compute Acceleration, Graphics & Vision, Interface Connectivity , Memory Interfaces, Security, Wireless, System Peripheral, Embedded Memories, and Foundation Libraries. The catalog covers everything from analog front-ends, data converters, processors, DSPs, AI accelerators, and imaging solutions to high-speed connectivity, memory controllers and PHYs, cryptographic engines, embedded memory macros, standard cell libraries, and wireless communication IP.
This catalog allows you to explore and compare IP cores from leading vendors, based on performance, power, process node compatibility, and application domain.
Whether you are designing for automotive, wireless communication, consumer electronics, or data centers, you can find the right IP solutions for your system requirements.
Rising edge delay cell for control circuits, 10ns - TSMC 180nm
Rising edge delay cell for control circuits, 10ns - TSMC 180nm
RF Pre-Divider, Control from Digital Logic, up to 8GHz - GlobalFoundries 55nm
RF Pre-Divider, Control from Digital Logic, up to 8GHz - GlobalFoundries 55nm
Divide-By-Two, up to 12GHz, Programmable Direct / Div-By-2 Modes, up to 12GHz - GlobalFoundries 40nm
Divide-By-Two, up to 12GHz, Programmable Direct / Div-By-2 Modes, up to 12GHz - GlobalFoundries 40nm
Divide-By-Two, CMOS, up to 8GHz - GlobalFoundries 55nm
Divide-By-Two, CMOS, up to 8GHz - GlobalFoundries 55nm
Divide-By-Two IQ, CMOS, up to 8GHz - GlobalFoundries 55nm
Divide-By-Two IQ, CMOS, up to 8GHz - GlobalFoundries 55nm
Divide-By-Three, CMOS, up to 8GHz - GlobalFoundries 55nm
Divide-By-Three, CMOS, up to 8GHz - GlobalFoundries 55nm
Divide-by-N, up to 3GHz, Programmanble Division Number - GlobalFoundries 40nm
Divide-by-N, up to 3GHz, Programmanble Division Number - GlobalFoundries 40nm
Divide-By-Four IQ, CMOS, up to 8GHz - GlobalFoundries 55nm
Divide-By-Four IQ, CMOS, up to 8GHz - GlobalFoundries 55nm
Digital controller for DCDC, asynchronous & synchronous parts - TSMC 180nm
Digital controller for DCDC, asynchronous & synchronous parts - TSMC 180nm
PMOS 1.5A Over Current Protection - TSMC 180nm
PMOS 1.5A Over Current Protection - TSMC 180nm
PA detector - GlobalFoundries 130nm RFSOI
PA detector - GlobalFoundries 130nm RFSOI
NMOS Zero Crossing detector - TSMC 180nm
NMOS Zero Crossing detector with Negative Over Current protection 1A - TSMC 180nm
Dual voltage detector , 3.7V supply - TSMC 180nm
Dual voltage detector , 3.7V supply - TSMC 180nm
Detector for RSSI - GlobalFoundries 22nm
Detector for RSSI - GlobalFoundries 22nm
Amplitude Detector, Output 2bits - GlobalFoundries 55nm
Amplitude Detector, Output 2bits - GlobalFoundries 55nm
Amplitude Detector, Ouput 2bits - GlobalFoundries 40nm
Amplitude Detector, Ouput 2bits - GlobalFoundries 40nm
Binary to Thermocoder, 5bit - GlobalFoundries 130nm RFSOI
Binary to Thermocoder, 5bit - GlobalFoundries 130nm RFSOI
Binary to Thermocoder, 4bit - GlobalFoundries 130nm RFSOI
Binary to Thermocoder, 4bit - GlobalFoundries 130nm RFSOI
Binary to Thermocoder, 3bit - GlobalFoundries 130nm RFSOI
Binary to Thermocoder, 3bit - GlobalFoundries 130nm RFSOI
Binary to One-hot coder, 4bit - GlobalFoundries 130nm RFSOI
Binary to One-hot coder, 4bit - GlobalFoundries 130nm RFSOI