Vendor: Global UniChip Corp. (GUC) Category: SRAM

TSMC CLN5FF High Density Single Port SRAM Compiler

IGMSHDY01A is a synchronous ULVT / LVT periphery high density single port SRAM compiler.

TSMC 5nm N5FF Available on request View all specifications

Overview

IGMSHDY01A is a synchronous ULVT / LVT periphery high density single port SRAM compiler. It is developed with TSMC 5 nm 0.75 V/1.2 V CMOS LOGIC FinFET Compact Process. Different combinations of words, bits, and column-selected number (MUX) could be used to generate the most desirable configurations.
Given the desired size and timing constraints, the IGMSHDY01A compiler is capable of providing suitable synchronous SRAM instances models within minutes. It is capable of automatically generating the datasheets, Verilog behavioral simulation models, Place & Route (P & R) models, and test patterns for use in ASIC designs. The duty cycle length could be neglected as long as setup/hold time and minimum high/low pulse width requirements are satisfied. This allows a more flexible clock falling edge during each operation.

Key features

  • The High Density Single Port SRAM operates within voltage range from 0.675 V to 0.825 V and junction temperature range from -40 °C to 125 °C. The available supported macro size is configurable from 512 bits to 576K bits. The Compiler is divided into 1 groups according to their column selection numbers (Mux=8).
  • ? Pins and metal layers
  • – 1P3M (1X_h_1Xb_v): 3 metal layers used and top metal is MXb.
  • – Power mesh supported with M3 pins
  • ? Compilation options
  • – MUX selection for the desired macro aspect ratio
  • – Bit-write mask function (BWEB pin) that allows writing to designated bits in a word
  • ? Power management
  • – Sleep mode powers down most of the peripheral circuits for leakage reduction with data retention.
  • – Deep sleep mode powers down most of the peripheral circuits for leakage reduction and retains memory array content with lower voltage.
  • – Shutdown mode achieves highest leakage reduction without data retention.
  • ? General features
  • – High Current TSMC 6T 0.0257 um2 SRAM bit cell
  • – Frequently used EDA model support
  • – Column redundancy
  • – Dual rail design to support Dynamic Voltage Frequency Scaling (DVFS) application

Silicon Options

Foundry Node Process Maturity
TSMC 5nm N5FF Available on request

Specifications

Identity

Part Number
IGMSHDY01A
Vendor
Global UniChip Corp. (GUC)
Type
Silicon IP

Files

Product Sheet Download

Note: some files may require an NDA depending on provider policy.

Provider

Learn more about SRAM IP core

A Process-Aware Hybrid Si/IGO Monolithic-3D 6T SRAM with BEOL Pass-Gates for the 2nm Node

The authors propose a monolithic-3D (M3D) 6T SRAM at the 2nm node, integrating BEOL IGO pass-gates (PGs) with an all-silicon nanosheet latch, buried power rails (BPRs), and Ru interconnects. TCAD calibrated to a state-of-the-art double-gate IGO transistor with a tri-layer HfO2/ZrO2/HfO2 (HZH) gate stack is combined with virtual fabrication and 3D parasitic extraction to realize the first process-aware layout of this topology.

Frequently asked questions about SRAM IP cores

What is TSMC CLN5FF High Density Single Port SRAM Compiler?

TSMC CLN5FF High Density Single Port SRAM Compiler is a SRAM IP core from Global UniChip Corp. (GUC) listed on Semi IP Hub. It is listed with support for tsmc Available on request.

How should engineers evaluate this SRAM?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this SRAM IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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