Vendor: Certus Semiconductor Category: Analog

Specialed 20V Analog I/O in TSMC 55nm

A TSMC 55nm LP Specialized 20V Analog I/O in Standard Low Voltage CMOS This silicon-proven TSMC 55nm LP 20V ESD cell is a high-vo…

Overview

A TSMC 55nm LP Specialized 20V Analog I/O in Standard Low Voltage CMOS

This silicon-proven TSMC 55nm LP 20V ESD cell is a high-voltage electrostatic discharge (ESD) protection solution specifically engineered forlow-power and high-performance applications. This ESD cellis designed to safeguard high- voltage interfaces commonly found in analog, mixed-signal, RF, and power management ICs, where protection against electrostatic discharge events is critical for long-term reliability. By leveraging TSMCs 55nm Low Power (LP) process, this ESD solution ensures compatibility with high-voltage device architectures, making it ideal for automotive, industrial, and consumer electronics applications that demand both robust ESD resilience and minimal parasitic impact.

Optimized to withstand Human Body Model (HBM) and Charged Device Model (CDM) stress, this 20V ESD cell offers enhanced reliability in protecting sensitive I/O and power rails from transient voltage spikes. Its low-capacitance architec- ture is particularly beneficial for maintaining signal integrity, reducing the risk of performance degradation in high-speed communication interfaces, data converters, and mixed-signal circuits.

In addition to its high voltage handling capability, the ESD cell features a compact and layout-efficient design, allowing for optimized area utilization without compromising protection levels. This makes it easier to integrate within tight floorplan constraints, enabling cost-effective implementation while meeting stringent foundry ESD design rules. The solution is also scalable and customizable, offering flexibility for different pad structures, I/O configurations, and circuit topologies based on the unique requirements of the target IC application.

By providing a proven, silicon-validated ESD protection solution, the TSMC 55nm LP 20V ESD cell enables designers to achieve first-time-right silicon, reducing the risk of costly re-spins and ensuring compliance with industry-standard reliability specifications. Whether for display drivers, power management ICs, automotive ASICs, or industrial control chips, this ESD cell delivers the robust protection, design flexibility, and integration efficiency needed to support todays demanding semiconductor applications.

Library Overview

Feature Specs Comment
Core TSMC055LP HPL (1.0V) & LP (1.05V)
I/O Device Any Independent
BEOL Any Uses up to M2
PAD Independent Cell is CUP compliant
Cell Height 75x115um Up to M2

Pin Out and Function

Pin Pin Type Description
ADHV0 Power First half of HV Clamp
ADHV1 Power Second half of HV Clamp
VSSUB Ground Substrate
BIAS VDD Bias Highest on-die power

Silicon Options

Foundry Node Process Maturity
TSMC 55nm GP —

Specifications

Identity

Part Number
IS55
Vendor
Certus Semiconductor
Type
Silicon IP

Files

Note: some files may require an NDA depending on provider policy.

Provider

HQ: United States

Learn more about Analog IP core

CDM Dependence on Device Capacitance

This blog will focus on what happens during the CDM pulse itself, and will show how the pulse properties change as a function of DUT to Field Plate capacitance.

Field Induced CDM Explained

Integrated circuits are commonly tested for ESD robustness with 2 tests, Human Body Model (HBM) and Charged Device Model (CDM). Most engineers quickly grasp the procedure for HBM, but the CDM test is often poorly understood. This is unfortunate, because a large fraction of the ESD failures experienced in modern board assembly operations are CDM type failures. This article will describe the events which occur during a CDM test conducted using the widely accepted field induced CDM (FCDM) test.

One Platform, Five Libraries: Certus Semiconductor’s I/O IP Portfolio for Every Application on TSMC 22nm ULL/ULP Technologies

Certus Semiconductor’s I/O libraries for TSMC’s 22nm ultra-low leakage (22ULL) and 22nm ultra-low power (22ULP) technologies offer robust, high-performance solutions tailored to a wide range of SoC designs — from ultra-low power IoT nodes to demanding consumer and automotive systems. Whether you need low leakage, high drive strength, or analog compatibility, our production-proven IP covers it all.

Frequently asked questions about Analog I/O Pad Library IP cores

What is Specialed 20V Analog I/O in TSMC 55nm?

Specialed 20V Analog I/O in TSMC 55nm is a Analog IP core from Certus Semiconductor listed on Semi IP Hub. It is listed with support for tsmc.

How should engineers evaluate this Analog?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this Analog IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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