Vendor: VeriSilicon Microelectronics (Shanghai) Co., Ltd. Category: Single-Protocol PHY

Samsung 28nm FDSOI 1.8v/1.0v sub-LVDS Receiver

Samsung 28nm FDS Silicon Proven View all specifications

Key features

  • Process: Samsung 28nm FDSOI process (0.9V / 1.8V)
  • Supply voltage: 1.62V<=AVDD18<=1.98V, 0.9V<=AVDD10(VDD10)<=1.1V
  • Mos device: pfet, nfet, egpfet, egnfet
  • Operating current:AVDD18<24mA AVDD10<2mA
  • Operating junction temperature: - 40°C ~ +25°C ~ +125°C

Silicon Options

Foundry Node Process Maturity
Samsung 28nm FDS Silicon Proven

Specifications

Identity

Part Number
SE28FDSOIV18_SUBLVDSRX_01
Vendor
VeriSilicon Microelectronics (Shanghai) Co., Ltd.
Type
Silicon IP

Provider

Frequently asked questions about Single-Protocol PHY IP

What is Samsung 28nm FDSOI 1.8v/1.0v sub-LVDS Receiver?

Samsung 28nm FDSOI 1.8v/1.0v sub-LVDS Receiver is a Single-Protocol PHY IP core from VeriSilicon Microelectronics (Shanghai) Co., Ltd. listed on Semi IP Hub. It is listed with support for samsung Silicon Proven.

How should engineers evaluate this Single-Protocol PHY?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this Single-Protocol PHY IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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