Vendor: Weasic Microelectronics Category: Amplifier

Power Amplifier 130-170GHz

The WEA130170P55S consists of four cascaded differential amplifying stages.

Overview

The WEA130170P55S consists of four cascaded differential amplifying stages. The first three stages are cascode stages,while the final one is a common emitter stage. Transformers are used as matching networks between the stages. An output balun is used to transform the final stage differential output to a single ended. The scaling of the devices maximize the power amplifier’s linearity performance.

Key features

  • Gain:24dB
  • NF:12.6dB@170GHz
  • OIP3:16.2dBm
  • 1Dbocp:6.5dBm
  • PAE@0dBm:0.41%
  • PAE@1dBCP:1.8%

Block Diagram

Applications

  • P2P

Specifications

Identity

Part Number
WEA130170P55S
Vendor
Weasic Microelectronics
Type
Silicon IP

Files

Note: some files may require an NDA depending on provider policy.

Provider

Learn more about Amplifier IP core

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Frequently asked questions about Amplifier IP cores

What is Power Amplifier 130-170GHz?

Power Amplifier 130-170GHz is a Amplifier IP core from Weasic Microelectronics listed on Semi IP Hub.

How should engineers evaluate this Amplifier?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this Amplifier IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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