Vendor: Weasic Microelectronics Category: Amplifier

Low-Noise Amplifier 26-30GHz

The WEA2630L45G is an integrated low-noise amplifier designed for Microwave Backhaul,5G Communications and mm-Wave Wireless Phase…

Overview

The WEA2630L45G is an integrated low-noise amplifier designed for Microwave Backhaul,5G Communications and mm-Wave Wireless Phase Arrays receiver applications. The WEA2630L45G operates between 26 and 30GHz with a signal gain of 18 dB, noise figure of 2.9 dB and current consumption 35 mA from 1.5V supply. The WEA2630L45G is fabricated on GlobalFoundries 45RFSOI process occupying a total silicon area of 1.6mm x 1.5mm.

Key features

  • Small signal gain: 18 dB
  • Low noise figure: 2.9 dB
  • Current consumption: 35 mA @ 1.5 V
  • Shut-down current: 0.8 mA
  • Input/output impedance internally matched to 50 ?
  • 2dBm RX Input Referred IP3
  • Single DC supply: 1.5V
  • Area:1.6 x1.5mm

Block Diagram

Applications

  • 5G,Satellite

Specifications

Identity

Part Number
WEA2630L45G
Vendor
Weasic Microelectronics
Type
Silicon IP

Files

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Provider

Frequently asked questions about Amplifier IP cores

What is Low-Noise Amplifier 26-30GHz?

Low-Noise Amplifier 26-30GHz is a Amplifier IP core from Weasic Microelectronics listed on Semi IP Hub.

How should engineers evaluate this Amplifier?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this Amplifier IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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