A Process-Aware Hybrid Si/IGO Monolithic-3D 6T SRAM with BEOL Pass-Gates for the 2nm Node
The authors propose a monolithic-3D (M3D) 6T SRAM at the 2nm node, integrating BEOL IGO pass-gates (PGs) with an all-silicon nanosheet latch, buried power rails (BPRs), and Ru interconnects. TCAD calibrated to a state-of-the-art double-gate IGO transistor with a tri-layer HfO2/ZrO2/HfO2 (HZH) gate stack is combined with virtual fabrication and 3D parasitic extraction to realize the first process-aware layout of this topology.