CoreLTEFE: RF Front-End for LTE mid-band application - GlobalFoundries 130nm RFSOI
CoreLTEFE: RF Front-End for LTE mid-band application - GlobalFoundries 130nm RFSOI
- GlobalFoundries
- 130nm
- RFSOI
- Silicon Proven
Analog and Mixed-Signal IP cores are essential building blocks in modern SoC and ASIC designs, enabling seamless interaction between analog signals and digital processing.
These IP cores are widely used for data conversion (ADC, DAC), clock generation (PLL, oscillators), power management, and sensors & monitors such PVT monitors.
This catalog allows you to compare analog and mixed-signal IP cores from leading vendors by performance, power consumption, process node compatibility, and application domain.
Whether you are designing for wireless communication, automotive systems, consumer electronics, or industrial IoT, you can find the most suitable IP solutions for your requirements.
CoreLTEFE: RF Front-End for LTE mid-band application - GlobalFoundries 130nm RFSOI
CoreLTEFE: RF Front-End for LTE mid-band application - GlobalFoundries 130nm RFSOI
CoreFE: RF Front-End - GlobalFoundries 130nm RFSOI
CoreFE: RF Front-End - GlobalFoundries 130nm RFSOI
CoreDCDC: High-Performance DCDC for Power management - TSMC 180nm
CoreDCDC: High-Performance DCDC for Power management - TSMC 180nm
RF Buffer, Fmax 12GHz, External drive - GlobalFoundries 40nm
RF Buffer, Fmax 12GHz, External drive - GlobalFoundries 40nm
RF Buffer, Fmax 12GHz , Internal Drive - GlobalFoundries 40nm
RF Buffer, Fmax 12GHz , Internal Drive - GlobalFoundries 40nm
RF Buffer, CMOS, Push-Pull, Fmax 8GHz, for Internal Drive - GlobalFoundries 55nm
RF Buffer, CMOS, Push-Pull, Fmax 8GHz, for Internal Drive - GlobalFoundries 55nm
RF Buffer, CMOS, Push-Pull, Fmax 8GHz, for External Drive - GlobalFoundries 55nm
RF Buffer, CMOS, Push-Pull, Fmax 8GHz, for External Drive - GlobalFoundries 55nm
Constant-Gm bias - GlobalFoundries 130nm RFSOI
Constant-Gm bias - GlobalFoundries 130nm RFSOI
Central Current Bias 12x0.5uA - TSMC 180nm
Central Current Bias 12x0.5uA - TSMC 180nm
BG Voltage bias generator, 1.0V to 1,5V - TSMC 180nm
BG Voltage bias generator, 1.0V to 1,5V - TSMC 180nm
Voltage Reference, 1.2V - GlobalFoundries 130nm RFSOI
Voltage Reference, 1.2V - GlobalFoundries 130nm RFSOI
Voltage Reference with Cext Option, 1.2V - GlobalFoundries 55nm
Voltage Reference with Cext Option, 1.2V - GlobalFoundries 55nm
Voltage Reference with Cext Option, 1.2V - GlobalFoundries 40nm
Voltage Reference with Cext Option, 1.2V - GlobalFoundries 40nm
25 % duty cycle generator - GlobalFoundries 22nm
25 % duty cycle generator - GlobalFoundries 22nm
Power amplifier, 1.8GHz - GlobalFoundries 130nm RFSOI
Power amplifier, 1.8GHz - GlobalFoundries 130nm RFSOI
Feedback Error amplifier - TSMC 180nm
Feedback Error amplifier - TSMC 180nm
SAR ADC with RDAC, 5b - GlobalFoundries 55nm
SAR ADC with RDAC, 5b - GlobalFoundries 55nm
SAR ADC with RDAC, 10b - GlobalFoundries 40nm
SAR ADC with RDAC, 10b - GlobalFoundries 40nm
24-bit 320kHz Bandwidth ADC IP
The CT-320K is a 24-bit continuous-time delta-sigma analog-to-digital converter IP.
1.8V Programmable 100MHz Oscillator I/O Pad Set
The Oscillators library provides a programmable oscillator for on-chip asynchronous clock generation with an appropriate external…