Vendor: InPsy Category: NAND Flash

4800 ONFI NV-DDR3 and NV-LPDDR4 with 4-tap DFE

Our 4800 ONFI PHY is a IP solution, including I/O, PMA, PCS and test engine with four-tap DFE.

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Overview

Our 4800 ONFI PHY is a complete IP solution, including I/O, PMA, PCS and test engine with four-tap DFE. The IPT 4800 ONFI PHY facilitates high-speed data transfer between NAND flash memory and host controllers. This interface is crucial for enhancing the performance and reliability of storage solutions in various applications, from consumer electronics to industrial systems.

Key features

  • Supports Both NV-DDR3 and NV-LPDDR4 with 4-tap DFEs
    • NV-DDR3 up to 3,600 MT/s
    • NV-LPDDR4 up to 4,800MT/s
  • Support Decision Feedback Equalization (DFE): For extra high loading, DFE can reduce errors and improve data integrity
  • Compliant with JEDEC 6.0 (TBD) and JESD 230G specifications
  • Supports real-time PVT data-eye monitoring
  • Supports all required trainings and calibrations
  • Supports Power-Down Modes
    • Active
    • Low-power Run
    • Sleep
    • Low Power Sleep
    • Standby
    • Hibernate
  • Compliant with AMBA APB3.0 for register accessing

Block Diagram

4800 ONFI NV-DDR3 and NV-LPDDR4 with 4-tap DFE block diagram

Files

Product Sheet Download

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Specifications

Identity

Part Number
4800 ONFI NV-DDR3 and NV-LPDDR4 with 4-tap DFE
Vendor
InPsy

Provider

InPsy
HQ: Taiwan (R.O.C.)
InPsy was founded in September 2019 with a vision to empower customer innovation with cutting-edge semiconductor interconnect IP solutions. Through seamless collaboration with major global wafer foundries, chip design houses and strategic partners, InPsy has demonstrated its mass production proven track record of IP technology firsts on the most advanced technology nodes. Ultimately, our mission is to be the leading provider of innovative silicon IP solutions, recognized globally for our unmatched customer satisfaction, exceptional quality, and technical excellence. Think of us as your outsourced, in-house IP design team
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Learn more about NAND Flash IP core

Concealable physical unclonable functions using vertical NAND flash memory

Here, the authors propose a concealable PUF using V-NAND flash memory by generating PUF data through weak Gate-Induced-Drain-Leakage (GIDL) erase. The differences in doping depth among V-NAND strings arising from the fabrication cause variations in GIDL erase performance. The resulting V-NAND PUF demonstrated ideal security characteristics while maintaining 100% accuracy under variations in read count and temperature.

Scaling NAND flash to 20-nm node and beyond

Intel-Micron have recently introduced a scalable planar NAND cell for the 20nm technology [1]. Replacement of conventional wrap floating gate (FG) NAND memory cell with a High-K/Metal gate planar cell that can scale to the 20nm node and beyond was a significant challenge and required comprehensive material and cell exploration and optimization. This paper discusses some of the fundamental cell design issues considered and addressed to arrive at this planar cell technology including the reasoning behind choosing the planar floating gate cell over the nano-crystal cell, and the nitride cell.

Frequently asked questions about NAND Flash IP

What is 4800 ONFI NV-DDR3 and NV-LPDDR4 with 4-tap DFE?

4800 ONFI NV-DDR3 and NV-LPDDR4 with 4-tap DFE is a NAND Flash IP core from InPsy listed on Semi IP Hub.

How should engineers evaluate this NAND Flash?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this NAND Flash IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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