Vendor: VeriSilicon Microelectronics (Shanghai) Co., Ltd. Category: ROM

VeriSilicon SMIC 0.13um Syn. LP DROM Compiler, Memory Array Range:128 to 1Mega Bits

VeriSilicon SMIC 0.13um synchronous programmable Low Power diffusion ROM compiler optimized for Semiconductor Manufacturing Inter…

SMIC 130nm G Silicon Proven View all specifications

Overview

VeriSilicon SMIC 0.13um synchronous programmable Low Power diffusion ROM compiler optimized for Semiconductor Manufacturing International Corporation (SMIC) 0.13um Logic 1P8M Salicide 1.2/2.5(3.3)V process can flexibly generate memory blocks via a friendly GUI or shell commands. The compiler supports a comprehensive range of word length and bit length. While satisfying Low Power, Low Leakage and speed requirements, it has been optimized for area efficiency. VeriSilicon SMIC 0.13um Synchronous Low Power diffusion ROM compiler uses four metal layers within the blocks and supports metal 6, 7 or 8 as the top metal. Dummy bit cells are designed in with the intention to enhance reliability.

Key features

  • Low power
  • Low Leakage
  • High Density
  • Size Sensitive Self-time Delay for Fast Access and "Zero" Hold Time
  • Automatic Power Down

Silicon Options

Foundry Node Process Maturity
SMIC 130nm G Silicon Proven

Specifications

Identity

Part Number
S13_LPDROM_01
Vendor
VeriSilicon Microelectronics (Shanghai) Co., Ltd.
Type
Silicon IP

Provider

Learn more about ROM IP core

An MLC ROM With Inserted Redundancy and Novel Sensing Scheme

An Nor-type MLC ROM, Multi Layer Cell Read Only Memory macro of 16M bits (actual 32M bits) density is presented. The MLC ROM is designed by a 0.090 μm CMOS logic process. The ROM cell of 0.40μm ×0.50μm with 0.03μm per step of the channel width and channel length increase is determined to obtain 4 levels of Ids. A scheme of 2-step sensing with current-to-voltage converter (step1) and an ADC (step2) are applied to obtain an access time of 5 ns. 4 bits per cell can be achieved by inserting more referencing columns of ROM cells to track and to compensate noise from power and ground bouncing.

A Flexible, Field-programmable ROM Replacement

For large amounts of on-chip code and data, mask read-only memory (ROM) provides an inexpensive and easily programmed storage mechanism. However, the inability to configure ROM after wafer processing means that information stored in the ROM cannot be changed in the field. Antifuse one-time programmable (OTP) provides a flexible, field-programmable alternative to ROM. An antifuse-based bit cell uses controlled, irreversible thin (gate) oxide breakdown to program a bit.

How to design secure SoCs Part IV: Runtime Integrity Protection

In previous articles, we gave an overview about secure SoC architectures (Part I), about the importance of key management (Part II) and secure boot (Part III) - the first line of defense. Part IV of the series focuses on runtime integrity protection, a paramount, ensuring the application remains secure even during active operation.

Frequently asked questions about ROM IP cores

What is VeriSilicon SMIC 0.13um Syn. LP DROM Compiler, Memory Array Range:128 to 1Mega Bits?

VeriSilicon SMIC 0.13um Syn. LP DROM Compiler, Memory Array Range:128 to 1Mega Bits is a ROM IP core from VeriSilicon Microelectronics (Shanghai) Co., Ltd. listed on Semi IP Hub. It is listed with support for smic Silicon Proven.

How should engineers evaluate this ROM?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this ROM IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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