Dual Port (1 read only port, 1 write only port) Register File Compiler on N22ULL
Two port register file (1R1W) with low power retention mode Bit Cell Power Supply (V) 8T 0.9
- Register File
Embedded memory IP cores are fundamental components in modern SoC and ASIC designs, providing fast and efficient on-chip data storage for processors, accelerators, and peripherals.
These IP cores encompass a broad range of volatile and non-volatile memory technologies, including SRAM for high-speed data storage, ROM for fixed program and boot code storage, register files for processor and accelerator architectures, as well as EEPROM, eFuse/OTP, and MTP (Multiple-Time Programmable) memories for configuration data, security credentials, device calibration, and permanent system information.
This catalog allows you to compare embedded memory IP cores from leading vendors based on density, access time, power consumption, and process node compatibility.
Whether you are designing high-performance processors, AI accelerators, automotive systems, or IoT devices, you can find the right embedded memory IP for your design.
Dual Port (1 read only port, 1 write only port) Register File Compiler on N22ULL
Two port register file (1R1W) with low power retention mode Bit Cell Power Supply (V) 8T 0.9
Single Port Register File Compiler on N22ULL
Single port register file compiler with low power retention mode Bit Cell Power Supply (V) 6T 0.9
Single Port Low Voltage SRAM Memory Compiler on N22ULL - Low Power Retention and Column Repair
Single Port SRAM Compiler with Low Power Retention Mode and Ultra Low Leakage Bit Cell Power Supply (V) 6T 0.9
Single Port Low Voltage SRAM Memory Compiler on N22ULL
Single port SRAM compiler with low power retention mode.
512x1 Bits OTP (One-Time Programmable) IP, MXIC 0.18um 1.8V/5V CMOS 18B Process
The ATO00512X1MX180LB52ND is organized as a 512-bit by 1 one-time programmable (OTP).
Our PSRAM solutions cover a range from 400Mbps to 1066Mbps, offering both normal-speed PSRAM digital IP and high-speed PSRAM mixe…
GLOBALFOUNDRIES 22nm High Density Single-Port SRAM Compiler
VeriSilicon GLOBALFOUNDRIES 22FDSOI Low Power Synchronous Single-Port SRAM compiler optimized for GLOBALFOUNDRIES FDSOI 22nm proc…
GLOBALFOUNDRIES 22nm Low Leakage Single-Port SRAM Compiler
VeriSilicon GLOBALFOUNDRIES 22FDSOI Low Power Synchronous Single-Port SRAM compiler optimized for GLOBALFOUNDRIES FDSOI 22nm proc…
GLOBALFOUNDRIES 22nm Low Power Single-Port SRAM Compiler
VeriSilicon GLOBALFOUNDRIES 22FDSOI Low Power Synchronous Single-Port SRAM compiler optimized for GLOBALFOUNDRIES FDSOI 22nm proc…
LogicFlash® Embedded MTP in Nexchip 150nm~55nm
LogicFlash® MTP?????CMOS???????????????,????????,??????????,?????1?????,??IP??,???1KB~64KB???????,??????2????????
LogicFlash® Embedded MTP in CSMC 180nm~110nm
LogicFlash® MTP?????CMOS???????????????,????????,??????????,?????1?????,??IP??,???1KB~64KB???????,??????2????????
LogicEE® Embedded EEPROM in CSMC 180nm~110nm
LogicEE® EEPROM IP?????EEPROM?IP????,?????????,?????????????????2K??(Byte)????,???????,??????10???????????
Metal programmable ROM compiler - TSMC 130 nm BCD Plus - Non volatile memory optimized for low power - compiler range up to 256 k
Single Port SRAM compiler - TSMC 130 nm BCD Plus - Memory optimized for ultra high density and high speed - compiler range up to …
CrossBar Resistive RAM (ReRAM) is a non-volatile memory (NVM) that can be integrated into any complementary metal-oxide semicondu…
55nmHV MTP Non Volatile Memory for Standard CMOS Logic Process
NSCore's TwinBit(TM) is the only embedded CMOS, multi-time programmable (MTP), non-volatile RAM IP of its kind, utilizing the 'ho…
Efuse Switch - GlobalFoundries 130nm RFSOI
Efuse Switch - GlobalFoundries 130nm RFSOI
Zero Additional Mask Anti-fuse OTP
Anti-Fuse type Non-Volatile Memory IP that can be programmed one time.
Thread Synthesis and Reordering attachment IP for use with random access masters to HBM IP
Samsung 28nm Low Voltage Single-Port SRAM Compiler
VeriSilicon Samsung 28FDSOI Low Voltage Synchronous Single-Port SRAM compiler optimized for Samsung FDSOI 28nm process can flexib…