SMIC 55nm LL LPDDR interface for DRAM application

Key Features

  • LPDDR interface for DRAM application;
  • SMIC 55nm Logic Low Leakage 1P10M Salicide 1.2V/1.8V/2.5V Process;
  • Cell Size (Width * height) 35um * 174um with DUP stagger bonding pads;
  • Work voltage: 1.8V;
  • Programmable drive-strength, Schmitt?trigger?enable input,optional pullup,pulldown resistor; support data rate up to 400Mbps;
  • Suitable for 7, 8, 9 and 10 layers application ;

Technical Specifications

Foundry, Node
SMIC 55nm LL
Maturity
Silicon Proven
SMIC
Silicon Proven: 55nm LL
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Semiconductor IP