A <4Gbps, Wide I/O Compatible, Die to Die Interface in TSMC 16nm and 28nm.
This silicon proven die to die interface includes IP in both TSMC 16nm FFC/FFC+ and 28nm HPM/HPC/HPC+. The I/O cells for both versions of the library are defined as TX only and RX only. The cells have two modes of operation: standard full rail to rail swing or a custom low noise psuedo-differential interface. The RX cells have a weak pull-down feature. The library is designed for Flip-chip/Die to Die packaging only, with no Wirebond option. Both library options have a common power bus architecture that when the cells are abutted, will feed through. There are no Power or Ground Pad/Cells, however all VDD and VSS connections will be made to the Core domain in upper metals. Both library options are ultra-low power, have a small footprint, MCM compliant, and have HBM & CDM robustness.
Operating Conditions for 16nm
Parameter | Value |
VDDIO | 0.8V |
I/O Device | 1.8V |
Core | Use SVT Only |
Cell Size | 50x28.06um |
BEOL | M8 & below |
VDD Core | 0.8V +/- 10% |
Temperature | -40C to 125C |
Operational Bit Rate | 2Gbps1 |
Operating Conditions for 28nm
Parameter | Value |
VDDIO | 0.9V |
I/O Device | 1.8V |
Core | Use SVT Only |
Cell Size | 50x25um |
BEOL | M8 & below |
VDD Core | 0.9V +/- 10% |
Temperature | -40C to 125C |
Operational Bit Rate | 2Gbps1 |
Cells for 16nm D2D
Cell Name | Width | Description |
UF_TX | 50x25um | TX Cell |
UF_RX | 50x25um | RX Cell |
Cells for 28nm D2D
Cell Name | Width | Description |
UD_TX | 50x30.5um | TX Cell |
UD_RX | 50x30.5um | RX Cell |