1.8V and 3.3V Radiation-Hardened GPIO with Optimized LDO in GF 12nm

A radiation-hardened GlobalFoundries 12nm LP/LP+ Flip-Chip IO library with both 1.8V and 3.3V GPIO, fail-safe GPI, analog cell, and associated ESD. Also features an LDO optimized for use with 3.3V GPIO.

This radiation-hardened, by design, library features both a 1.8 and 3.3V GPIO with multiple drive strengths of 2mA, 4mA, 8mA, and 16mA, along with a full-speed output enable function. The library includes an LDO to generate a 1.8V refer ence which has been optimized for use with the 3.3V GPIO. The library incorporates radiation-hardened ESD cells, which are silicon-proven. A fail-safe GPI allows user to interface with bus-type protocols like I2C. All cells support independent power sequencing and integrate power-on-control circuitry for a clean low-leakage power-up. A selectable Schmitt trigger receiver adds input flexibility, while a 50K ohm pull-up or pull-down resistor is available for termination configurations. The library is enriched with feed-through, filler, transition, and domain-break cells to allow for flexible pad ring construction while maintaining ESD robustness. ESD targets are 2KV HBM / 500V CDM with 2KV IEC 61000-4-2 system stress capability.

Operating Conditions

Library Summary

• 2mA, 4mA, 8mA and 16mA drive strengths
• Pairs with optimized LDO (3.3V only)
• Full-speed output enable
• Independent power sequencing
• Integrated power-on-control circuitry
• Selectable Schmitt trigger receiver
• 50K ohm selectable pull-up or pull-down resistor item  ESD: 2KV HBM, 500V CDM3, 2KV IEC 61000-4-24
• Standards
  • 1.8V and 3.3V LVCMOS
  • 1.8V and 3.3V LVTTL
  • I2C and SPI (Input only)