Vendor: Faraday Technology Category: Flash

UMC 55nm embedded flash and embedded E2PROM ultra low power split-gate process synchronous well bias feature HVT+uHVT periphery high density single port SRAM memory compiler with row redundancy.

UMC 55nm embedded flash and embedded E2PROM ultra low power split-gate process synchronous well bias feature HVT+uHVT periphery h…

Overview

UMC 55nm embedded flash and embedded E2PROM ultra low power split-gate process synchronous well bias feature HVT+uHVT periphery high density single port SRAM memory compiler with row redundancy.

Silicon Options

Foundry Node Process Maturity
UMC 55nm ULP

Specifications

Identity

Part Number
FSF0G_W_SHUHVTRED
Vendor
Faraday Technology

Provider

Faraday Technology
HQ: Taiwan
Faraday Technology Corporation is a leading fabless ASIC and silicon IP provider. The company's broad silicon IP portfolio includes I/O, Cell Library, Memory Compiler, ARM-compliant CPUs, DDRI/II/III, MPEG4, H.264, USB 2.0/3.0, 10/100 Ethernet, Serial ATA, and PCI Express, etc. Headquartered in Taiwan, Faraday has service and support offices around the world, including the U.S., Japan, Europe, and China. Faraday is listed in Taipei Stock Exchange, ticker 3035.

Learn more about Flash IP core

Concealable physical unclonable functions using vertical NAND flash memory

Here, the authors propose a concealable PUF using V-NAND flash memory by generating PUF data through weak Gate-Induced-Drain-Leakage (GIDL) erase. The differences in doping depth among V-NAND strings arising from the fabrication cause variations in GIDL erase performance. The resulting V-NAND PUF demonstrated ideal security characteristics while maintaining 100% accuracy under variations in read count and temperature.

Maximizing Performance & Reliability for Flash Applications with Synopsys xSPI Solution

Systems using SoCs designed in advanced processes generally rely on external Flash devices that use NOR/NAND Flash memory technology for non-volatile storage. NOR Flash memory offers many benefits for device manufacturers and consumers, such as faster reading, low power consumption, and smaller area. In contrast, NAND Flash memories are ideal for applications such as data storage, where higher memory capacity and faster write and erase operations are required.

LPDDR flash: A memory optimized for automotive systems

Next-generation automotive systems are advancing beyond the limits of currently available technologies. The addition of advanced driver assistance systems (ADAS) and other advanced features requires greater processing power and increased connectivity throughout the vehicle.

Frequently asked questions about Embedded Flash IP cores

What is UMC 55nm embedded flash and embedded E2PROM ultra low power split-gate process synchronous well bias feature HVT+uHVT periphery high density single port SRAM memory compiler with row redundancy.?

UMC 55nm embedded flash and embedded E2PROM ultra low power split-gate process synchronous well bias feature HVT+uHVT periphery high density single port SRAM memory compiler with row redundancy. is a Flash IP core from Faraday Technology listed on Semi IP Hub. It is listed with support for umc.

How should engineers evaluate this Flash?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this Flash IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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