DDR23 COMBO PHY CMD/ADDR BLOCK ; UMC 40LP/RVT LowK Logic Process with 2.5V device
DDR23 COMBO PHY CMD/ADDR BLOCK ; UMC 40LP/RVT LowK Logic Process with 2.5V device
- Controller + PHY + 1
- DDR2
- UMC
- 40nm
- LP
- Pre-Silicon
DDR Interface IP cores provide the controller, PHY, and calibration technologies required to connect SoCs and ASICs to external DRAM memory devices, enabling high-bandwidth and low-latency memory access for compute-intensive applications.
This category includes IP solutions supporting DDR2, DDR3, DDR4, and DDR5 memory standards. Available implementations may include memory controllers, PHYs, controller-PHY subsystems, training engines, initialization logic, timing management, ECC support, and signal integrity optimization features designed for reliable operation across advanced semiconductor process nodes.
DDR23 COMBO PHY CMD/ADDR BLOCK ; UMC 40LP/RVT LowK Logic Process with 2.5V device
DDR23 COMBO PHY CMD/ADDR BLOCK ; UMC 40LP/RVT LowK Logic Process with 2.5V device
DDR2/3 Combo Command /Address Block (with 2.5V IO device) ; UMC 90nm SP-RVT LowK Logic Process
DDR2/3 Combo Command /Address Block (with 2.5V IO device) ; UMC 90nm SP-RVT LowK Logic Process
DDR2-PHY data block; UMC 90nm SP/RVT Lowk Process
DDR2-PHY data block; UMC 90nm SP/RVT Lowk Process
DDR2-PHY data block with BOAC IO; UMC 90nm SP/RVT Lowk Logic Process
DDR2-PHY data block with BOAC IO; UMC 90nm SP/RVT Lowk Logic Process
DDRII Data Block for Chip Application; UMC 0.13um HS/FSG Logic Process
DDRII Data Block for Chip Application; UMC 0.13um HS/FSG Logic Process
DDR2 PHY Data Block ;UMC 0.13um Logic HS/FSG Process
DDR2 PHY Data Block ;UMC 0.13um Logic HS/FSG Process
DDR2-PHY Command/Address block; UMC 90nm SP/RVT Lowk Process
DDR2-PHY Command/Address block; UMC 90nm SP/RVT Lowk Process
DDR2-PHY command/address block for DRAM chip, BOAC ; UMC 90nm SP/RVT Low-K Logic Process
DDR2-PHY command/address block for DRAM chip, BOAC ; UMC 90nm SP/RVT Low-K Logic Process
DDR2 PHY Command/Address Block (for Chip Application); UMC 0.13um HS/FSG Logic Process
DDR2 PHY Command/Address Block (for Chip Application); UMC 0.13um HS/FSG Logic Process
DDR2 PHY Command/Address Block ; UMC 0.13um HS/FSG Logic Process
DDR2 PHY Command/Address Block ; UMC 0.13um HS/FSG Logic Process
Data block of 1:2 DDR2-PHY ; UMC 0.11um HS/AE (AL Advanced Enhancement) Logic Process
Data block of 1:2 DDR2-PHY ; UMC 0.11um HS/AE (AL Enhancement) Logic Process
DDR2/DDR1/MDDR Combo Data Block ; UMC 65nm LP/RVT LowK Logic Process
DDR2/DDR1/MDDR Combo Data Block ; UMC 65nm LP/RVT LowK Logic Process
DDR2/MDDR Combo Data Block ; 0.13um Logic HS/FSG Logic Process
DDR2/MDDR Combo Data Block ; 0.13um Logic HS/FSG Logic Process
DDR2/MDDR Combo PHY data block ; UMC 55nm SP process with 2.5V device
DDR2/MDDR Combo PHY data block ; UMC 55nm SP process with 2.5V device
DDR2/MDDR PHY Data block ; UMC 65nm 1.0V with 2.5V device SP/RVT LowK Logic Process
DDR2/MDDR PHY Data block ; UMC 65nm 1.0V with 2.5V device SP/RVT LowK Logic Process
DDR2/MDDR COMBO PHY Data block for Chip usage ; UMC 55nm SP/RVT with 2.5V device LowK Logic Process
DDR2/MDDR COMBO PHY Data block for Chip usage ; UMC 55nm SP/RVT with 2.5V device LowK Logic Process
DDR2/MDDR Combo PHY for Chip load usage ; UMC 65NM SP-RVT with 2.5V device LowK Logic Process
DDR2/MDDR Combo PHY for Chip load usage ; UMC 65NM SP-RVT with 2.5V device LowK Logic Process
DDR2-PHY compensation block, BOAC; UMC 90nm SP/RVT Low-K Logic process
DDR2-PHY compensation block, BOAC; UMC 90nm SP/RVT Low-K Logic process
DDR2-PHY compensation block, BOAC; UMC 0.13um HS/FSG process
DDR2-PHY compensation block, BOAC; UMC 0.13um HS/FSG process
DDR2 PHY compensation block for 171 series (non BOAC); UMC 0.13um HS/FSG Logic Process
DDR2 PHY compensation block for 171 series (non BOAC); UMC 0.13um HS/FSG Logic Process