180nm OTP Non Volatile Memory for Standard CMOS Logic Process

Overview

NSCore's PermSRAM(R) is the only embedded CMOS, one time programmable (OTP), non-volatile RAM IP of its kind, utilizing the 'hot carrier effect' to trap charge in the sidewall spacer of the gate. PermSRAM provides the benefits of Embedded Flash without the additional process cost in a secure, on-chip memory configuration qualified under automotive conditions. PermSRAM IP is available for mainstream foundries as well as several undisclosed Japanese IDM's. Please contact us to learn how our NVM IP can be used to replace EEPROM or ROM combined with on-chip SRAM for applications requiring extreme security such as HDMI or requiring analog trimming such as LCD controllers.

Key Features

One-Time Programmable (OTP)
> 10 years retention
Uses standard CMOS process with no additional masks
100% testable prior to programming
Includes comprehensive Built-in Self Test
Field or factory programmable
Convert to ROM with one mask change
Operating temperature range -40C to 125C
5V programming voltage, 1.8V read voltage
Available sizes: 512b, 4Kb, 1Mb

Benefits

Reduce system cost by replacing external EEPROM
Secure memory contents - impossible to reverse engineer
Process scalability - process nodes of 0.5um to 32nm
High yield - immunity to process variation
Lower test cost - no UV erase necessary
No recovery time from standby read - no read charge pump required
DIN/DOUT Port: 8b
Wide range of applications:

Security code storage
Program storage
Analog trimming
Gamma correction
Memory repair
Feature selection
Patch code
Chip ID
Digital rights management (DRM)
HDMI decode
And more …

Deliverables

Datasheets & Layout Guidelines
Behavioral Models (.v)
Timing Models (.lib)
Physical Models (.lef)
Layout Database (GDSII) & LVS Netlist

Technical Specifications

Maturity

Production

Availability

Immediately

TSMC

Silicon Proven: 180nm G

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