Sony将使用FD-SOI用于其堆栈式图像传感器
Samsung goes for FD-SOI mass production
Junko Yoshida, EETimes
1/21/2016 10:30 AM EST
TOKYO—For chip designers pondering the next-node choices for their new SoCs, the FD-SOI Forum held here Thursday (Jan. 21) yielded news they could use.
Key developments were:
- The mass production capacity of Samsung’s 28nm FD-SOI technology has matured.
- RF integration in FD-SOI chips is fast becoming a reality, as Samsung is offering a production version of its process development kit (PDK) for RF in the second quarter of this year.
- Globalfoundries’ 22nm FD-SOI platform, called 22nm FDX, offers ultra-lower power consumption with 0.4 volt operation.
- Globalfoundries now says that its 22nm FDX will be ready for high volume production in mid-2017.
But the biggest FD-SOI news, which surfaced as chatter and whispering during coffee breaks at the Forum (rather than on the formal agenda), is that Sony is looking to use FD-SOI for the image signal processor (ISP) on stacked CMOS Image Sensors (CIS).
Related Semiconductor IP
- RISC-V CPU IP
- AES GCM IP Core
- High Speed Ethernet Quad 10G to 100G PCS
- High Speed Ethernet Gen-2 Quad 100G PCS IP
- High Speed Ethernet 4/2/1-Lane 100G PCS
Related News
- intoPIX扩展TICO-RAW IP 核范围,具备更小型架构并支持更广泛图像传感器与相机
- 2022年CMOS图像传感器市场将遭遇13年来首次下滑
- Teledyne e2v选用Mixel的 MIPI D-PHY IP 方案集成至其新型 Topaz CMOS 图像传感器中
- sureCore 的 28 纳米 FDSOI 内存编译器浓重上市