Stand alone ESD diode for TSMC .13u Foundry Process

Overview

The Impulse TSMC .13u ESD diode was made to provide ESD discharge paths when integrating third party IP in an integrated circuit design for total ESD protection. The Impulse ESD diode has been successfully used with Dolphin Technologies, Artisan/ARM, TriCN/Synopsis I/O libraries, as well as popular IP blocks from RAMBUS, Chip Idea and other quality IP vendors. A 5.5 volt reverse bias anode to cathode operational specification enables the Impulse TSMC .13u ESD diode to be the device of choice for 5 volt tolerant designs.

Key Features

This robust, silicon-proven ESD diode is available in TSMC .13u G or LV process. The ESD diode has a low dynamic resistance under ESD conditions, low capacitance, and is scaleable to any application with an operating voltage of 5.5 volts and absolute maximum voltage of 6 volts.

Benefits

The Impulse ESD diode has been successfully used with Dolphin Technologies, Artisan/ARM, TriCN/Synopsis I/O libraries, as well as popular IP blocks from RAMBUS, Chip Idea and other quality IP vendors.

Deliverables

GDSII file, LVS netlist

Technical Specifications

Foundry, Node

TSMC .13u

Availability

Now

TSMC

In Production: 130nm LV
Pre-Silicon: 130nm LV
Silicon Proven: 130nm LV

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