76 GHZ to 81 GHz LNA Phase Array
The WEA7681L130 consists of phase array element of 4 LNAs and a combiner.
Overview
The WEA7681L130 consists of phase array element of 4 LNAs and a combiner. Each LNA has 3 stages. The WEA7681L130 functions as a MUX. Every LNA stage current is programmable. The chip has a build in FIFO for consecutive LNA sequencing operation. The chip has 3 integrated monitors i) 2.5V chip supply, ii) 1.2V LDO supply and iii) the chip temperature. The LNA gain is controlled by current steering of the last stage together with the LNA bias current on each stage. The chip has been implemented in the 130nm BiCMOS GlobalFoundries process.
Key features
- Low Noise Amplifier
- Frequency Bandwidth 76-81 GHz
- LNA function as a MUX between 4 amplified RF inputs
- GainMAX> 20 dB
- NF < 5.6 dB
- Noise Figure, > -14 1dB
- Input Compression Point @100°C
- Gain control range: 20dB
- Current control of each stage of the LNA
- Supply Voltage 2.5V
- Area: 2.23 mm x 2.23 mm
- GF8XP 130nm BiCMOS GlobalFoundries
Block Diagram
Files
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Specifications
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Frequently asked questions about RF Transceiver IP cores
What is 76 GHZ to 81 GHz LNA Phase Array?
76 GHZ to 81 GHz LNA Phase Array is a RF Transceiver IP core from Weasic Microelectronics listed on Semi IP Hub.
How should engineers evaluate this RF Transceiver?
Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this RF Transceiver IP.
Can this semiconductor IP be compared with similar products?
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