Silicon Nanowire Remains Favorite to Replace FinFET
Peter Clarke, Electronics360
June 16, 2015
Silicon-based nanowire transistors (NWTs)—otherwise known as gate-all-around transistors—are getting ready to replace FinFETs at the 7nm or 5nm integrated circuit (IC) manufacturing nodes, according to experts in the field.
Although the alternatives of vertical versus lateral orientation and silicon, germanium, carbon or III-V compound semiconductor materials in the transistor channel provide a broad set of possibilities, one source of uncertainty is determining what 7nm or 5nm means in the context of the upcoming IC manufacturing nodes.
To read the full article, click here
Related Semiconductor IP
- Bluetooth Low Energy 6.0 Digital IP
- Ultra-low power high dynamic range image sensor
- Flash Memory LDPC Decoder IP Core
- SLM Signal Integrity Monitor
- Digital PUF IP
Related News
- Dolphin Design announces the successful launch of its first silicon tape out in 12nm FinFet
- Chevin are proud to be awarded runner-up of Arm Silicon Startups Contest 2025
- ZeroRISC Closes $10 Million in Seed Funding Led by Fontinalis to Accelerate Commercial Adoption of Open-Source Silicon for Secure Devices
- InCore Unveils SoC Generator Platform: From Idea to FPGA Validation in Minutes; Demonstrates Silicon Proof of Auto-Generated SoC
Latest News
- SiMa.ai Raises $85M to Scale Physical AI, Bringing Total Funding to $355M
- Armv9 and CSS Royalties Drive Growth in $1bn Arm Q1 Earnings
- Creonic Releases DVB-S2X Demodulator Version 6.0 with Increased Bitwidth and Annex M Support
- Arm Q1 FYE26 Revenue Exceeds $1 Billion for Second Consecutive Quarter
- 1‑VIA Expands Globally with New India R&D Office in Pune to Accelerate Innovation in Data Center Connectivity