Sidense 1T-OTP NVM Qualified for 150 Degrees C Automotive High-Reliability Requirements on TSMC's BCD Process
Sidense 1T-OTP NVM Qualified for 150 Degrees C Automotive High-Reliability Requirements on TSMC's BCD Process
- 1T-OTP fully qualified for automotive temperature range, supporting AEC-Q100 Grade 0 applications on TSMC 180nm BCD process
- Chosen by a number of leading semiconductor companies, enabling cost-effective NVM for high-reliability device
Ottawa, Canada – (April 1, 2013) – Sidense Corp., a leading developer of Logic Non-Volatile Memory (LNVM) one-time programmable (OTP) memory IP cores, announced today that the Company’s 1T-OTP macros for TSMC’s 180nm BCD 1.8/5V/HV and G 1.8/5V processes have met all of TSMC’s IP9000 Assessment program requirements. Sidense OTP macros are fully qualified for -40ºC to 150°C read and field-programmable operations to support applications such as automotive electronics that require reliable operation and long-life data retention in high-temperature environments.
Sidense has already licensed its Automotive Grade 1T-OTP macros to many top fabless semiconductor companies, who have designed the macros into a wide range of leading-edge products. Customers including Fairchild Semiconductor, MAZ Brandenburg, Shanghai Haier IC and ZMDI are using Sidense Automotive Grade OTP in a wide range of devices, including power-management ICs, sensors and microcontrollers for applications in automotive, industrial, mobile and consumer electronics.
“Our company is seeing an exciting and growing demand for 1T-OTP that supports power and HV processes,” said Tom Schild, Sidense VP of Sales and Marketing. “We are helping many customers bring to market competitive new PMICs, sensors and other products by offering cost-effective and highly reliable NVM qualified for demanding, high-reliability, high-temperature environments, in addition to being ideal for power and cost-sensitive mobile applications.”
Sidense Automotive Grade 1T-OTP macros completed full qualification for High-Temperature Operating Life (HTOL) at -40ºC to 150°C and Data Retention Storage Life (DRSL) to 2000 hours at 150°C. This level of qualification was completed to support customers requiring devices to conform to AEC-Q100 Grade 0 specifications and provide data retention over the full operating temperature range, at full duty cycle, for more than 10 years.
Macros are available in a comprehensive range of off-the-shelf configurations supporting small densities of 256 bits for configuration and trim applications, up to 256 Kbits per macro for code storage and multiple NVM uses. Automotive Grade 1T-OTP provides many advantages, including small footprints to minimize cost, field-programmability, configurations with word widths up to 128 bits and fast read access to allow executing code from OTP for many applications.
About Sidense Corp.
Sidense Corp. provides secure, very dense and reliable non-volatile, one-time programmable (OTP) memory IP for use in standard-logic CMOS processes with no additional masks or process steps required. The Company's innovative one-transistor 1T-Fuse™
architecture provides the industry's smallest footprint, most reliable and lowest power Logic Non-Volatile Memory (LNVM) IP solution. With over 100 patents granted or pending, Sidense OTP provides a field-programmable alternative solution to Flash, mask ROM and eFuse in many OTP and MTP applications.
Sidense SiPROM, SLP and ULP memory products, embedded in more than 250 customer designs, are available from 180nm down to 28nm and are scalable to 20nm and below. The IP is offered at and has been adopted by all top-tier semiconductor foundries and selected IDMs. Customers are using Sidense OTP for analog trimming, code storage, encryption keys such as HDCP, WHDI, RFID and Chip ID, medical, automotive, and configurable processors and logic. For more information, please visit www.sidense.com.
Related Semiconductor IP
- NVM OTP in Huali (40nm, 28nm)
- NVM OTP in Tower (180nm, 110nm)
- NVM OTP in GF (180nm, 130nm, 65nm, 55nm, 40nm, 28nm, 22nm, 12nm)
- NVM OTP in UMC (180nm, 153nm, 110nm, 90nm, 80nm, 55nm, 40nm, 28nm, 22nm)
- NVM OTP in TSMC (180nm, 152nm, 130nm, 110nm, 90nm, 65nm, 55nm, 40nm, 28nm, 22nm, 16nm, 12nm, N7, N6, N5, N4P)
Related News
- Sidense 1T-OTP NVM Qualified in Second-Generation TSMC 180nm BCD Process
- Jim Lipman Joins Logic NVM Pioneer Sidense as Marketing Director
- Dongbu HiTek Selects Kilopass Embedded NVM Solution for 0.18um BCD Process
- Embedded OTP Leader Sidense Hires NVM Veteran Humes for Product Engineering VP Position
Latest News
- HPC customer engages Sondrel for high end chip design
- PCI-SIG’s Al Yanes on PCIe 7.0, HPC, and the Future of Interconnects
- Ubitium Debuts First Universal RISC-V Processor to Enable AI at No Additional Cost, as It Raises $3.7M
- Cadence Unveils Arm-Based System Chiplet
- Frontgrade Gaisler Unveils GR716B, a New Standard in Space-Grade Microcontrollers