MoSys Exhibits at TSMC Tech Symposium

Apr 09, 2010 -- MoSys, Inc.:

Who:

MoSys (NASDAQ: MOSY), a leading provider of differentiated, high-density memory and high-speed interface (I/O) intellectual property (IP), will be exhibiting at TSMC's 2010 Technology Symposium.

What:

The TSMC 16th Annual Technology Symposium brings together the best and brightest in the global semiconductor industry to "Collaborate to Innovate."

Where/When:

San Jose, CA - Tuesday, April 13 (8 a.m. - 5 p.m.)
San Jose McEnery Convention Center
150 West San Carlos Street
San Jose, CA 95110
 
Austin, TX - Friday, April 16 (8 a.m. - 5 p.m.)
Four Seasons Hotel
98 San Jacinto Blvd
Austin, TX 78701
 
Boston, MA - Tuesday, April 20 (8 a.m. - 5 p.m.)
Westin-Waltham Hotel
70 Third Avenue
Waltham, MA 02451

More information is available on MoSys' website at http://www.mosys.com/eventCalendar.php

About MoSys, Inc.

Founded in 1991, MoSys(R) (NASDAQ: MOSY), develops, markets and licenses differentiated embedded memory and high speed parallel and serial interface IP for advanced SoC designs. MoSys' patented 1T-SRAM(R) and 1T-Flash(R) memory technologies offer a combination of high density, low power consumption, high speed and low cost advantages that are unmatched by other available memory technologies for a variety of networking, computing, storage and consumer/graphics applications. MoSys' silicon-proven interface IP portfolio includes DDR3 PHYs, as well as SerDes IP that support data rates from 1 Gigabit per second (Gbps) to 11 Gbps, across a wide range of standards, including PCI Express, XAUI, SATA and 10G KR. MoSys IP has been production-proven in more than 225 million devices.

MoSys is headquartered in Sunnyvale, California. More information is available on MoSys' website at www.mosys.com.