High-voltage solutions in baseline GlobalFoundries and multi-foundry technologies

Overview

Certus is pleased to offer High-voltage ESD solutions across multiple baseline technologies. Distinguishing Certus is our ability to provide high-voltage ESD solutions achieving 10V, 15V and even 20V using only baseline CMOS processing, without additional layers. This allows for straightforward co-integration of higher voltage applications -- such as charge pumps, high power RF, Power Management, and MEMS -- with conventional CMOS designs while keeping processing costs to a minimum.

Built into our IO libraries, and also offered as a separate service, is our strong ESD expertise. Certus was founded by ESD engineers and our results speak for themselves. Not only do we consistently exceed the standard ESD targets of 2KV HBM and 500V CDM, but we also provide on-chip solutions for standards such as IEC-61000-4-2, system-level ESD and Cable Discharge Events (CDE).

Other Certus specialty cell offerings include low-capacitance RF, small-footprint ESD, RGMII, Secure Digital, LVDS, Analog/RF and more across most major foundries and technology nodes. We are particularly suited at providing customized options in a cost-efficient framework. Please contact us for supplementary physical or electrical features that can suit your needs.

Key Features

High-Voltage ESD

10V, 15V, and 20V analog cells
Negative ranges of -5V, -10V, -18V
Fully compatible with baseline CMOS processing (no added layers)
Full interoperability with Certus GPIO libraries
ESD protection exceeding 2KV HBM, 500V CDM

Physical Features

Flexible cell and pad arrangements
Wirebond and Flip-chip support
Metal stack variants

Benefits

10V, 15V, 20V analog cells
Negative ranges of -5V, -10V, -18V
Compatibility with baseline CMOS processing (no added layers)
Interoperability with Certus GPIO libraries
Flexible cell and pad arrangements
Wirebond & Flip-chip support
Metal stack variants
Proven >2KV HBM / 500V CDM ESD protection

Applications

Charge pumps, high-power RF, power management, MEMS, HV

Deliverables

GDS
CDL netlist
Verilog stub
Verilog behavioral model
LEF
Liberty Timing Files
IBIS (option)
Electrical datasheet
User guide and application notes
Consulting and Support

Technical Specifications

Foundry, Node

180nm, 130nm, 65nm, 28nm, 22nm, 16nm, 12nm; GF 180nm, 65nm

Maturity

Silicon Proven

Availability

Immediate

GLOBALFOUNDRIES

In Production: 65nm LPe , 180nm , 180nm LP
Pre-Silicon: 65nm LPe , 180nm , 180nm LP
Silicon Proven: 65nm LPe

TSMC

In Production: 12nm , 16nm , 22nm , 28nm HP , 28nm HPC , 28nm HPCP , 28nm HPM , 65nm G , 65nm LP , 130nm G , 130nm LP , 180nm G , 180nm LP
Pre-Silicon: 12nm , 16nm , 22nm , 28nm HP , 28nm HPC , 28nm HPCP , 28nm HPM , 130nm G , 130nm LP
Silicon Proven: 12nm , 16nm , 22nm , 28nm HP , 28nm HPC , 28nm HPM

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