Full Radiation-Hardened ESD Library in GF 12nm LP/LP+

Key Features

  • Full ESD Library for Powers and I/O
    • Power Protection 
      • 5V ESD Protection, single clamp 
      • 3.3V Power Clamps, in 3 footprint sizes for flexible power protection
      • 1.8V Power Clamps, in 3 footprint sizes for flexible power protection
      • 0.8V Power Clamps, in 2 footprint sizes for flexible power protection
      • VSS1 to VSS2 ESD protection between separate Grounds, in two footprints
      • All clamps are good to 5us fast ramp rates (<1mA In-Rush current at 5us) 
  • I/O Protection 
    • I/O voltage ranges are 0.8V to 3.3V 
    • RF ESD ~45fF ESD solution, 1kV HBM protection, and >4A CDM 
    • High-Speed ESD: ~88fF, >3kV HBM, >6A CDM current
    • Regular I/O: ~160fF, >6kV HBM, >8A CDM 
  • Full Library is Latch-up proven to 200mA at -40C to 125C 
  • Radiation Hardened 64 MeV proton test and >1.3E+09 flux

Technical Specifications

Foundry, Node
GF 12nm LP/LP+
GLOBALFOUNDRIES
Pre-Silicon: 12nm
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Semiconductor IP