Full Radiation-Hardened ESD Library in GF 12nm LP/LP+
Key Features
- Full ESD Library for Powers and I/O
- Power Protection
- 5V ESD Protection, single clamp
- 3.3V Power Clamps, in 3 footprint sizes for flexible power protection
- 1.8V Power Clamps, in 3 footprint sizes for flexible power protection
- 0.8V Power Clamps, in 2 footprint sizes for flexible power protection
- VSS1 to VSS2 ESD protection between separate Grounds, in two footprints
- All clamps are good to 5us fast ramp rates (<1mA In-Rush current at 5us)
- Power Protection
- I/O Protection
- I/O voltage ranges are 0.8V to 3.3V
- RF ESD ~45fF ESD solution, 1kV HBM protection, and >4A CDM
- High-Speed ESD: ~88fF, >3kV HBM, >6A CDM current
- Regular I/O: ~160fF, >6kV HBM, >8A CDM
- Full Library is Latch-up proven to 200mA at -40C to 125C
- Radiation Hardened 64 MeV proton test and >1.3E+09 flux
Technical Specifications
Foundry, Node
GF 12nm LP/LP+
GLOBALFOUNDRIES
Pre-Silicon:
12nm