1 Gb/s LVDS Bidirectional IO on 12nm
The ODT-LVDS-BID1G-12nm is a high-speed Bidirectional LVDS IO cell capable of operating up to 1 Gb/s.
Overview
The ODT-LVDS-BID1G-12nm is a high-speed Bidirectional LVDS IO cell capable of operating up to 1 Gb/s.
The ODT-LVDS-BID1G-12nm uses a high-speed signal path that can provide low jitter for input ranges of up to 1 Gb/s input. It also features small area and low power consumption. It includes the internal termination resistor and ESD protection diodes on the VEXTP and VEXTN pins.
Key features
- Up to 1 Gb/s Data Rate
- LVDS Input/Output
- Ultra-compact size
- Embedded ESD Diodes
- Functional from -40°C to 125°C
Block Diagram
Applications
- Test and measurement
- PLL Interface
- Data Converter Timing interface
What’s Included?
- Datasheet
- Hard Macro (GDSII)
- Characterization Report (as applicable)
- Abstract View (LEF) for top level connectivity
- Spectre Netlist (as needed upon request)
- Behavioral Model
- Integration and Customer Support
Specifications
Identity
Provider
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Frequently asked questions about High-Speed I/O Pad IP
What is 1 Gb/s LVDS Bidirectional IO on 12nm?
1 Gb/s LVDS Bidirectional IO on 12nm is a High-Speed IP core from Omni Design Technologies, Inc. listed on Semi IP Hub.
How should engineers evaluate this High-Speed?
Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this High-Speed IP.
Can this semiconductor IP be compared with similar products?
Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.