SGC21713_IP007708_GF_22FDX can be used in a control loop to minimize the voltage for a given frequency or maximize frequency for a given voltage. Based on a group of sensors, it permits PVT and aging tracking, while allowing the identification of the actual variable that changed. Designed to achieve 3% overall accuracy (over Load / Line / Temp), it is specified from TJ = –40°C to +125°C.
PVT SENSOR
Overview
Key Features
- Sensitive to Process, Voltage, Temperature, Frequency
- and Aging
- Sensor for dynamic voltage and frequency optimization
- No impact on the digital design flow
- Configurable monitoring period
- 8-bit Resolution
Block Diagram
Technical Specifications
GLOBALFOUNDRIES
Pre-Silicon:
12nm
,
14nm
,
14nm
LPE
,
14nm
LPP
,
20nm
LPM
,
22nm
,
22nm
FDX
,
28nm
,
28nm
FDSOI
,
28nm
HPP
,
28nm
LPH
,
28nm
SLP
,
32nm
,
40nm
LP
,
55nm
,
55nm
LPX
,
65nm
,
65nm
LP
,
65nm
LPe
,
90nm
,
90nm
LP
,
130nm
,
130nm
HP
,
130nm
LP
,
130nm
LV
,
180nm
,
180nm
LL
,
180nm
LL
,
180nm
LP
,
180nm
LP
Intel Foundry
Pre-Silicon:
16nm
SMIC
Pre-Silicon:
14nm
,
28nm
,
28nm
HK
,
28nm
HKC+
,
28nm
PS
,
40nm
LL
,
55nm
G
,
55nm
LL
,
65nm
LL
,
90nm
G
,
90nm
LL
,
110nm
G
,
130nm
EEPROM
,
130nm
G
,
130nm
LL
,
130nm
LV
,
150nm
G
,
150nm
LV
,
153nm
,
160nm
G
,
160nm
LL
,
180nm
EEPROM
,
180nm
G
,
180nm
LL
,
250nm
G
Samsung
Pre-Silicon:
4nm
,
5nm
,
7nm
,
8nm
,
10nm
,
11nm
,
14nm
,
28nm
FDS
,
28nm
LPH
,
28nm
LPP
TSMC
Pre-Silicon:
3nm
,
4nm
,
5nm
,
6nm
,
7nm
,
10nm
,
12nm
,
16nm
,
20nm
,
22nm
,
28nm
,
28nm
HP
,
28nm
HPC
,
28nm
HPCP
,
28nm
HPL
,
28nm
HPM
,
28nm
LP
,
40nm
G
,
40nm
LP
,
45nm
GS
,
45nm
LP
,
55nm
FL
,
55nm
G
,
55nm
GP
,
55nm
LP
,
55nm
NF
,
55nm
ULP
,
55nm
ULPEF
,
55nm
UP
,
65nm
G
,
65nm
GP
,
65nm
LP
,
80nm
,
80nm
GT
,
80nm
HS
,
85nm
,
90nm
FS
,
90nm
FT
,
90nm
G
,
90nm
GOD
,
90nm
GT
,
90nm
LP
,
90nm
zzz
,
110nm
G
,
110nm
HV
,
110nm
LVP
,
130nm
,
130nm
BCD
,
130nm
BCD+
,
130nm
G
,
130nm
LP
,
130nm
LV
,
130nm
LVOD
,
150nm
G
,
150nm
LV
,
160nm
G
,
160nm
LP
,
180nm
,
180nm
E
,
180nm
ELL
,
180nm
FG
,
180nm
G
,
180nm
LP
,
180nm
LV
,
180nm
ULL
Tower
Pre-Silicon:
130nm
,
180nm
,
180nm
,
180nm
,
500nm
UMC
Pre-Silicon:
14nm
,
22nm
,
28nm
,
28nm
HLP
,
28nm
HPC
,
28nm
HPM
,
28nm
LP
,
40nm
,
40nm
LP
,
55nm
,
65nm
LL
,
65nm
LP
,
65nm
SP
,
80nm
,
90nm
G
,
90nm
LL
,
90nm
SP
,
110nm
,
130nm
,
150nm
,
162nm