Embedded flash IP, 1.8V/5V TSMC 180nmBCD
LEE Flash G1 (G1) is based on simple SONOS architecture and capable to scale down to 40nm geometry and supports auto grade temper…
- Flash
- 256KB macro Charaterization done, AG1 qualification by Jan, 2026
Embedded flash IP, 1.8V/5V TSMC 180nmBCD
LEE Flash G1 (G1) is based on simple SONOS architecture and capable to scale down to 40nm geometry and supports auto grade temper…
Embedded flash IP, 1.5V/5V SMIC 90nmBCD
LEE Flash G1 (G1) is based on simple SONOS architecture and capable to scale down to 40nm geometry and supports auto grade temper…
Embedded flash IP, 1.5V/5V 130nm
LEE Flash G1 (G1) is based on simple SONOS architecture and capable to scale down to 40nm and supports auto grade temperature and…
Embedded flash IP, 1.5V/5V 130BCD Plus
LEE Flash G1 (G1) is based on simple SONOS architecture and capable to scale down to 40nm geometry and supports auto grade temper…
Zero Additional Mask MTP IP, 2.2-5V 4kbit HHGrace 180BCD
LEE Flash ZT (ZT) achieves automotive grade temperature and quality grade.
LEE Flash G2 (G2) is an Flash IP offering unique features that no other Flash IP could offer.
Embedded flash IP, 1.32V/3V PSMC 90nm
LEE Flash G1 (G1) is based on simple SONOS architecture and capable to scale down to 40nm geometry and supports auto grade temper…
LEE Flash ZT (ZT) achieves automotive grade temperature and quality grade.