Overview
CrossBar Resistive RAM (ReRAM) High-Performance Memory IP cores are an ideal choice in embedded multi-time programmable (MTP) non-volatile memory applications such as Internet of Things (IoT), wearables, tablets, smartphones, consumer electronics, artificial intelligence, industrial, automotive and medical. This memory can also be utilized for few-time programmable (FTP) and one-time programmable (OTP) applications.
The High-Performance Memory non-volatile memory IP cores can be integrated at the same process nodes of microcontrollers (MCU), System-on-Chip (SoC) and Field Programmable Gate Arrays (FPGA) or used as stand-alone memory chip. Starting at 28nm and scaling below 10nm, the High-Performance Memory enables cost-effective, low latency, high-performance and low energy code execution and data storage memory solutions.
The data integrity and operational characteristics exceed current flash. Depending on the business model, the High-Performance Memory IP cores can be provided to customers as hard macros or architectural license. Supported densities are from 2M bits (256K Bytes) to 256M bits (32M Bytes), or custom sizes.
In addition to non-volatile memory applications, CrossBar is also offering its High-Performance ReRAM technology for use in security applications, where ReRAM is used for secure physical unclonable function (PUF) keys embedded in semiconductors.
Learn more about MRAM / RRAM IP core
This article will explore the potential advantages of RRAM and MRAM in various applications and elucidate why such new technologies are imperative to address future memory demands, as well as some challenges designers may encounter in the implementation.
Amir Regev, Weebitnano
In this article, a new way to implement high performance data storage is presented, allowing the use of server-class storage technology in an embedded environment.
Most of SSD manufacturers jumped into this new storage market with flash-based technology. A second wave of products will come in the near future, using a new generation of non-volatile memories, delivering impressive speed performances compared to NandFlash memories. The SSD manufacturers will have to deal with low latency SSD controller design in order to benefit from the new NVM features, while keeping high reliability and low power consumption.
This white paper proposes a solution based on a full hardware NVMe implementation, describing its architecture, implementation and characterization.
Embedded flash and its off-chip counterpart, NOR flash, have been the gold standards for non-volatile memory — the kind used for persistent or long-term data storage — for many years.
Unprecedented penetration of artificial intelligence (AI) algorithms has brought about rapid innovations in electronic hardware, including new memory devices. Nonvolatile memory (NVM) devices offer one such attractive alternative with ∼2× density and data retention after powering off. Compute-in-memory (CIM) architectures further improve energy efficiency by fusing the computation operations with AI model storage. Electronic characteristics of NVM devices, like resistance in the two resistance states, directly affect the circuit designers’ decisions and result in the varying performance of NVM-CIM chips.
