Vendor: Weebit Nano Category: MRAM / RRAM

ReRAM NVM in DB HiTek 130nm BCD

Weebit ReRAM (Resistive Random Access Memory) is an Non-Volatile Memory (NVM) technology that can be easily integrated into any C…

DB HiTek 130nm BCD Silicon Proven View all specifications

Overview

Weebit ReRAM (Resistive Random Access Memory) is an innovative Non-Volatile Memory (NVM) technology that can be easily integrated into any CMOS IC.

It is a high-performance and very low-power NVM, achieving 10K programming cycles and 10 years’ retention at high temperatures.

The technology is available in DB HiTek 130nm BCD process, tested on silicon, and ready for integration in user SoCs. The Weebit ReRAM IP module is provided in a wide range of features and can be customized per customers’ needs.

DB HiTek 130nm BCDMOS Process

Based in Korea, DB HiTek is a specialized foundry with leading analog and power semiconductor technology. Its technologies run in high volume and at world-class quality levels, as demonstrated by the company’s numerous quality-driven certifications. The company’s 130nm (0.13μm) BCDMOS (Bipolar CMOS-DMOS) process is optimized to increase power efficiency and low-power performance for analog, mixed-signal, and power management designs.

DB HiTek’s 130nm technology node supports up to 120V BCDMOS in addition to CMOS 1.5V and 5V devices. It supports up to six aluminum metal layers and is mixed-signal enabled. It offers a variety of CMOS thresholds to optimize for power and performance.

Feature Specifications

Technology DB HiTek 130LVA 130nm
Mask Adder 2
Supply Voltage 1.5V+/- 10% Read, 3.3V+/- 10% Program
Read Access Time <25nsec
Operation Temp. -40°C to 125°C
Capacity 1024 Kbit (1Mb) / 512Kb / 256Kb / 128Kb / 64Kb
Data Bus Width (Read) 32-bit (can be customized to 16-bit to 128-bit)
System Interface AHB (can be customized QSPI or other)
Endurance (Write cycles) 10K (can be extended to 100K)
Data Retention >10 years @125°C
XiP (Execute in Place) Special bus interface to enable firmware execution directly from the ReRAM
OTP Configurable ReRAM sector for trimming and configuration bits

Key features

  • 10K cycles endurance
  • >10 years retention at 125°C
  • Ultra-low power consumption
  • Low-cost NVM – requires only two additional masks
  • Tolerant to ionizing radiation and electromagnetic interference
  • Inherently secure technology
  • Back-end-of-line (BEOL) technology for integration flexibility

Block Diagram

Benefits

  • Excellent endurance and retention even at high temperatures
  • Ultra-low power consumption
  • Tolerant to ionizing radiation and electromagnetic interference
  • Inherently secure technology
  • Low-cost NVM – Requires only 2 additional masks
  • Back-end-of-line (BEOL) technology for integration flexibility

Applications

Weebit ReRAM IP for the DB HiTek 130nm BCD process can provide advantages for a broad range of applications, including:

  • Analog, power management, mixed-signal designs
  • IoT, industrial, automotive
  • Radiation-tolerant designs
  • Data logging applications

What’s Included?

  • Data sheet
  • Integration guide
  • Memory map
  • Verilog model
  • LEF
  • CDL
  • Timing constraints

Files

Note: some files may require an NDA depending on provider policy.

Silicon Options

Foundry Node Process Maturity
DB HiTek 130nm BCD Silicon Proven

Specifications

Identity

Part Number
WBT-SKYT-S130-v256-ReRAM
Vendor
Weebit Nano

Provider

Weebit Nano
HQ: Israel
Weebit is a leading developer of advanced semiconductor memory technology, incorporated in Israel in 2015 and publicly traded on the Australian Stock Exchange (ASX: WBT). The company’s ground-breaking Resistive Random Access Memory (ReRAM or RRAM) addresses the growing need for higher-performance, more reliable, lower-power, and more cost-effective non-volatile memory (NVM) solutions in a range of electronic products. In developing its ReRAM technology, Weebit has partnered with CEA-Leti, the French research institute recognized as a global leader in the field of micro-electronics. Starting in 2016, Leti has played a key role in advancing the development of Weebit’s industry-leading ReRAM. Weebit licenses its technologies to semiconductor companies and foundries, using a typical IP licensing model supporting license fees, royalties, and non-recurring engineering fees (NRE). The technology is ideal for both embedded SoC designs, where ease of fabrication and integration of various size arrays is required, and for discrete memory chips, where memory density and cost per bit are top priority.

Learn more about MRAM / RRAM IP core

How to Elevate RRAM and MRAM Design Experience to the Next Level

This article will explore the potential advantages of RRAM and MRAM in various applications and elucidate why such new technologies are imperative to address future memory demands, as well as some challenges designers may encounter in the implementation.

NVMe IP for Enterprise SSD

Most of SSD manufacturers jumped into this new storage market with flash-based technology. A second wave of products will come in the near future, using a new generation of non-volatile memories, delivering impressive speed performances compared to NandFlash memories. The SSD manufacturers will have to deal with low latency SSD controller design in order to benefit from the new NVM features, while keeping high reliability and low power consumption. This white paper proposes a solution based on a full hardware NVMe implementation, describing its architecture, implementation and characterization.

Assessing Design Space for the Device-Circuit Codesign of Nonvolatile Memory-Based Compute-in-Memory Accelerators

Unprecedented penetration of artificial intelligence (AI) algorithms has brought about rapid innovations in electronic hardware, including new memory devices. Nonvolatile memory (NVM) devices offer one such attractive alternative with ∼2× density and data retention after powering off. Compute-in-memory (CIM) architectures further improve energy efficiency by fusing the computation operations with AI model storage. Electronic characteristics of NVM devices, like resistance in the two resistance states, directly affect the circuit designers’ decisions and result in the varying performance of NVM-CIM chips.

Frequently asked questions about MRAM / RRAM IP cores

What is ReRAM NVM in DB HiTek 130nm BCD?

ReRAM NVM in DB HiTek 130nm BCD is a MRAM / RRAM IP core from Weebit Nano listed on Semi IP Hub. It is listed with support for dbhitek Silicon Proven.

How should engineers evaluate this MRAM / RRAM?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this MRAM / RRAM IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

×
Semiconductor IP