Vendor: Thesys-Intechna Category: Power Management Unit

Dual Low-Side Ultrafast MOSFET Driver

The dual high-speed gate drivers are especially well suited for driving the MOSFETs and IGBTs.

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Overview

The dual high-speed gate drivers are especially well suited for driving the MOSFETs and IGBTs. Each of the two outputs can source and sink 4A of current while producing voltage rise and fall times of less than 10 ns. Low propagation delay and fast, matched rise and fall times make the driver ideal for high-frequency and high-power applications.

Key features

  • Wide operating voltage range: 7 V..40 V
  • Extended operating temperature range: -40 °C to +150 °C
  • Non-inverting path
  • 4 A source/sink drive current
  • Low On-Off Delay Time: 50 ns

Block Diagram

TI-DR-LS block diagram

Benefits

  • Outputs may be connected in parallel for higher drive current
  • Under voltage lock out on power supply
  • Matched rise and fall times
  • Low propagation delay time
  • Low output impedance
  • ESD – protection

Applications

  • Efficient power MOSFET and IGBT switching
  • Switch mode power supplies
  • Motor controls
  • DC/DC converters
  • Class-D switching amplifiers
  • Pulse transformer driver

What’s Included?

  • Datasheet
  • GDSII database
  • Customer support

Files

Product Sheet Download

Note: some files may require an NDA depending on provider policy.

Specifications

Identity

Part Number
TI-DR-LS
Vendor
Thesys-Intechna
Type
Silicon IP

Provider

Thesys-Intechna
HQ: Russia
«Thesys-Intechna» was founded in 1993 by a Russian company «Thesys» conjunctly with a German firm «Thesys Gesellschaft für Mikroelektronik mbH» (since 1999 – one of the semiconductor divisions of «XFAB Semiconductor Foundries GmbH») as a designated representative in Russia and for joint work in the microelectronic field. We offer our experience and expertise in designing of analog-to-digital and digital-to-analog converters, analog and digital cell libraries, memory blocks, memory block compilers, Design Kits and ASICs.
Contact Thesys-Intechna

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Semiconductor IP FAQ

What is Dual Low-Side Ultrafast MOSFET Driver?

Dual Low-Side Ultrafast MOSFET Driver is a Power Management Unit IP core from Thesys-Intechna listed on Semi IP Hub.

How should engineers evaluate this Power Management Unit?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this Power Management Unit IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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