Low-Noise Bandgap Reference - Low Noise: 63nV/?Hz, PSRR: -80dB TSMC 0.18um CMOS (CLM18)

Overview

This macro-cell is a low noise, high PSRR voltage reference core designed for TSMC 0.18um (CLM18) CMOS technology. The core is ideal for applications where noise performance is critical. The circuit generates a buffered 1.185V, temperature-compensated bandgap voltage reference (40ppm/oC). A 5-bit trimming is available and guarantees ±1.5% output voltage accuracy. A 25uA reference current source (PTAT) for external use is also included.

Key Features

  • Reference Voltage: 1.185V ±1% (w/ trimming)
  • Low noise: 63nV/?Hz (10Hz to 25kHz)
  • High PSRR: –80dB (up to 100kHz)
  • Temperature compensated: < 40ppm/oC
  • Supply voltage: 5.0V ±10%
  • Buffered reference output: 100uA (max)
  • PTAT reference current output available
  • Area: 0.101mm2

Block Diagram

Low-Noise Bandgap Reference - Low Noise: 63nV/?Hz, PSRR: -80dB TSMC 0.18um CMOS (CLM18) Block Diagram

Applications

  • Battery powered equipment
  • Active RFID tag ICs
  • Energy Haversting ICs
  • Hearing Aids

Deliverables

  • Datasheet/Integration Guide
  • HDL Model
  • Flat GDSII database/LVS netlist
  • Customer Support

Technical Specifications

Foundry, Node
TSMC 0.18um CMOS (CLM18)
Maturity
Silicon Available
TSMC
Pre-Silicon: 180nm G
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Semiconductor IP