6-bit, 1 GSPS High Performance ADC in 28nm CMOS

Overview

The ODT-AFE-6B1G-28 is a high-performance I/Q ADC and I/Q DAC designed in a 28nm CMOS process, implemented using Omni Design's groundbreaking low power SWIFT technology.

The 6-bit, 1.056GSPS I/Q ADC supports input signals up to 400 MHz and features a differential full-scale range of 0.6Vpp and excellent static and dynamic performance. The ADC architecture is optimized to maximize performance while minimizing power and area consumption.

The 6-bit, 1.056GSPS I/Q DAC is a current steering DAC designed to drive a 100ohm different output load. The output full-scale current can be digitally programmed from 1-to-5mA.

The AFE includes a bandgap voltage/current reference to generate a power supply insensitive ADC reference voltage. The reference also generates the DAC bias current which is proportional to an off-chip resistor.

Key Features

  • 6-bit resolution, sampling and update rate up to 1 GSPS
  • Fully differential current output, fully specified from -40C to 125C
  • Ultra low power dissipation
  • Wide output bandwidth
  • Available in I/Q and arrayed configurations
  • Over 20 years of delivering industry leading data converters for high volume production

Benefits

  • High Performance Low Power, Low Area

Applications

  • Wireless communications
  • Wireline communications

Deliverables

  • Datasheet
  • Hard Macro (GDSII)
  • Characterization Report (as applicable)
  • Abstract View (LEF) for top level connectivity
  • Integration and Customer Support

Technical Specifications

Foundry, Node
TSMC 28nm
Maturity
Silicon Characterized
Availability
Now
TSMC
Pre-Silicon: 28nm
×
Semiconductor IP