512-bit EEPROM with configuration 16p1w32bit

The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 512 bits (32(bit per word) x 1(word per page) x 16(page)), which is organized as 16 pages of 1 words by 32 bit with single-bit output data and parallel write data.
Data writing in EEPROM consists of 2 phases - erasing and writing. Written EEPROM page data comes to input din<31:0>.
Erasing of words from page, performed by setting a signal hv_on, with the signal erase is at state «1». The address of erased page is defined the bus adr<3:0>. Value of the bus adr<3:0> doesn't change throughout all cycle of deleting (while hv_on = «1»).
Data writing from latches to the words is produced by signal setting hv_on, thus the signal write is in a state «1».
Data reading is performed using the sample signal.
Memory is optimized for usage in the industrial and commercial applications, requiring low power consumption and supply voltage.

• SMIC EEPROM CMOS 0.18 um
• High density of memory cells
• Writing and erasing data by one high-voltage pulse
• Programming and erase time – 2 ms (determined by specification of the EEPROM SMIC cell)
• Page writes allowed
• Data retention over 10 years (endurance 105 cycles, determined by SMIC technology)
• Low power dissipation in standby and active mode
• Internally organized 32(bit per word) x 1(word per page) x 16(page) bit
• Supported foundries: TSMC, UMC, Global Foundries, SMIC, iHP, AMS, Vanguard, SilTerra

• Access control systems
• Radio-frequency identification systems, smart cards
• Electronic devices with battery power
• Chip serial ID and chip safety
• Electronic tags UHF band

• Schematic
• GDSII
• Abstract view (.lef and .lib files)
• DRC, LVS, antenna reports
• Datasheet