3.6Kbit EEPROM IP with configuration 28p8w16bit
130GF_EEPROM_08 IP is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 3.6 Kbits, which is …
Overview
130GF_EEPROM_08 IP is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 3.6 Kbits, which is organized as 28 pages of 8 words by 16 bit with single-bit output data and parallel write data. Data programming in EEPROM consists of 2 consecutive phases - erasing and writing. Data to be programmed in EEPROM are applied to D1<15:0>, D0<15:0>inputs. The erasing phase is performed by setting BUSY signal to “1” while the ERASE signal is also at “1”. The writing phase is performed by setting BUSY signal to “1” while the WRITE signal is also at “1”. Data D1<15:0>, D0<15:0>, page address ADR_P<4:0> and word address in page ADR_W<2:0> must not be changed throughout the whole cycle of writing (i.e. while HV_ON = “1”). Data reading is performed using the SAMPLE signal.
Memory is optimized for usage in the industrial and commercial applications, requiring low power consumption and supply voltage.
Total area: 0.12 mm2.
ELECTRICAL CHARACTERISTICS
|
Parameter |
Symbol |
Conditions |
Value |
Units |
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|
min |
typ. |
max |
|||||
|
Supply voltage |
VDD |
Write mode |
|
|
|
|
|
|
Read mode |
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|
|
|
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|
Operating temperature range |
Tj |
- |
-40 |
+27 |
+125 |
°C |
|
|
Clock frequency for internal voltage doubler |
FCLK_VDD2 |
- |
- |
0.5 |
- |
MHz |
|
|
Clock frequency for high voltage pump generator |
FCLK_HV |
- |
- |
1 |
- |
MHz |
|
|
Reference current |
IREF |
receiving device: pMOSFET |
- |
50 |
- |
nA |
|
|
Access time |
tACC |
1.2V ≤ VDD ≤ 1.65V |
- |
0.3 |
0.4 |
us |
|
|
0.9V ≤ VDD < 1.2V |
- |
0.3 |
0.5 |
||||
|
0.8V ≤ VDD < 0.9V |
- |
0.3 |
0.6 |
||||
|
VDD = 0.7V |
- |
0.3 |
- |
||||
|
VDD = 0.6V |
- |
0.7 |
- |
||||
|
Active pulse width of BUSY signal |
TPRG |
- |
1 |
2 |
4 |
ms |
|
|
Current consumption in read mode* |
IREAD |
FSAMPLE = 0.5 MHz DCSAMPLE = 75% |
- |
- |
0.90 |
2.60 |
uA |
|
VDD = 1.0 V |
- |
0.75 |
1.70 |
||||
|
VDD = 0.9 V |
- |
0.70 |
1.60 |
||||
|
VDD = 0.8 V |
- |
0.55 |
1.40 |
||||
|
VDD = 0.7 V |
- |
0.50 |
- |
||||
|
VDD = 0.6 V |
- |
0.45 |
- |
||||
|
Average current consumption in program mode |
IPROG_AVG |
- |
- |
9 |
23 |
uA |
|
|
Peak current consumption in program mode |
IPROG_PEAK |
- |
- |
27 |
41 |
uA |
|
|
High Level Input Voltage |
VIH |
For digital inputs |
0.85VDD |
- |
VDD |
V |
|
|
Low Level Input Voltage |
VIL |
- |
- |
0.15 |
V |
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Block Diagram
Files
Note: some files may require an NDA depending on provider policy.
Silicon Options
| Foundry | Node | Process | Maturity |
|---|---|---|---|
| GlobalFoundries | 130nm | BCD | Pre-Silicon |
Specifications
Identity
Provider
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Frequently asked questions about EEPROM IP cores
What is 3.6Kbit EEPROM IP with configuration 28p8w16bit?
3.6Kbit EEPROM IP with configuration 28p8w16bit is a EEPROM IP core from NTLab listed on Semi IP Hub. It is listed with support for globalfoundries Pre-Silicon.
How should engineers evaluate this EEPROM?
Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this EEPROM IP.
Can this semiconductor IP be compared with similar products?
Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.