GF130_EEPROM_01 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 3.6Kbit, which is organ…
GF130_EEPROM_01 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 3.6Kbit, which is organized as 28 pages of 8 words by 16 bits with single-bit output data and parallel write data in one word. Data writing is performed by setting data at di<15:0>, page address at adr_p<4:0>, word address in the page at adr_w<2:0>, and then applying wr="1". Writing process finishes with setting flag ready to "1". Data reading is carried out by specifying page address at adr_p<4:0>, word address in the page at adr_w<2:0>, bit address in the word at adr_b<3:0>, and then applying the reading comparator strobe sample="1". The read bit appears at pin do after some delay. Memory is optimized for usage in the industrial and commercial applications, requiring low power consumption and supply voltage. Data to be write are set at data input pin di<15:0>. Writing process starts, when signal wr goes to "1". Data di<15:0>, page address adr_p<4:0>, word address in page adr_w<2:0> are latched into internal registers and cannot be changed until the end of the writing process. At the end of the writing, the ready = "1" flag is set.
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| Foundry | Node | Process | Maturity |
|---|---|---|---|
| GlobalFoundries | 130nm | BCD | Silicon Proven |
3.6Kbit EEPROM IP with configuration 28p8w16bit is a EEPROM IP core from NTLab listed on Semi IP Hub. It is listed with support for globalfoundries Silicon Proven.
Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this EEPROM IP.
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