1KByte EEPROM IP with configuration 66p16w8bit

130GF_EEPROM_04 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1056 Byte (8(bit per word) x 16(words per page) x 66(pages)) with parallel write&read data in one word.
Write EEPROM data comes to input DI<7:0> and write process execute if signal WR=“1”.
Data DI<7:0>, page address ADR_P<6:0>, word address in page ADR_W<3:0> are latched into internal registers and cannot be changed until the end of the writing process. At the end of the writing, the READY = “1” flag is set.
Data reading is carried out by specifying the page address ADR_P<6:0> and the address of the word in the page ADR_W<3:0>. After applying the reading strobe, the DO<7:0> signal is set at the output corresponding to the reading data from the corresponding addresses of the EEPROM cell.
EEPROM also has a 7MHz gated clock cell output (glitchless start) from a built-in oscillator. The oscillator has frequency control inputs to compensate for process variation. Memory is optimized for usage in the industrial and commercial applications, requiring low power consumption and supply voltage.

• Global Foundries Embedded EEPROM 0.13 um
• 1056 Byte of available memory 8(bit per word) x 16(words per page) x 66(pages) bit
• High density of memory cells
• Writing and erasing data by one high-voltage pulse
• Programming and erase time – 2 ms each
• Page writes allowed
• Data retention and endurance cycles determined by GF technology
• Low power dissipation in standby and active mode
• Built-in 7MHz oscillator

• Access control systems
• Radio-frequency identification systems, smart cards
• Electronic devices with battery power
• Chip serial ID and chip safety

• Schematic in electronic format (.netlist file)
• Layout in GDSII electronic format (.gds file)
• Abstract view in electronic format (.lef and .lib files)
• DRC, LVS, antenna reports in electronic format (.summary, .report files)
• Datasheet in electronic format (.pdf file)