1Kbyte EEPROM IP with configuration 64p8w16bit

The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1 Kbyte (16(bit per word) x 8(words per page) x 64(pages)) with single-bit output data and parallel write data in one word. Data writing is performed by setting data at DI<15:0> and write process execute if signal WR="1". Data DI<15:0>, page address ADR_P<5:0>, word address in page ADR_W<2:0> are latched into internal registers and cannot be changed until the end of the writing process. At the end of the writing, the READY = "1" flag is set. Data reading is carried out by specifying the page address ADR_P<5:0>, word address in the page ADR_W<2:0> and bit address in the word ADR_B<3:0>. After applying the reading strobe, the DO signal is set at the output corresponding to the reading data from the corresponding addresses of the EEPROM cell. EEPROM also has a 7MHz built-in oscillator. The oscillator has frequency control inputs to compensate for process variation. Memory is optimized for usage in the industrial and commercial applications, requiring low power consumption and supply voltage.

• Global Foundries Embedded EEPROM 0.13 um
• 1Kbyte of available memory 16(bit per word) x 8(words per page) x 64(pages) bit
• High density of memory cells
• Writing and erasing data by one high-voltage pulse
• Programming and erase time – 1 ms each
• Page writes allowed
• Data retention and endurance cycles determined by GF technology
• Low power dissipation in standby and active mode
• Built-in 7MHz oscillator

• Access control systems
• Radio-frequency identification systems, smart cards
• Electronic devices with battery power
• Chip serial ID and chip safety

• Schematic in electronic format (.netlist file)
• Layout in GDSII electronic format (.gds file)
• Abstract view in electronic format (.lef and .lib files)
• DRC, LVS, antenna reports in electronic format (.summary, .report files)
• Datasheet in electronic format (.pdf file)