FDSOI

FDSOI (Fully Depleted Silicon-On-Insulator) is a semiconductor fabrication technology where a thin silicon layer is placed on top of an insulating layer (buried oxide). This structure allows the transistor channel to be fully depleted, enabling better control over short-channel effects, lower leakage current, and higher switching speed compared to conventional bulk CMOS.

Key characteristics of FDSOI:

• Thin silicon layer fully depletes carriers
• Buried oxide isolates the active silicon layer from the substrate
• Enables body-biasing techniques to dynamically adjust transistor performance

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• MIPI D-PHY Transmitter/Receiver for DSI/CSI-2 on Samsung 28nm FD-SOI
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Related Blogs

• FDSOI Status and Roadmap
• FD-SOI vs FinFET: Dan Hutcheson Re-Runs His Survey
• FD-SOI State of the Union: There's Supply - Is There Demand?
• Silicon on Nothing: the Origins of FD-SOI
• GloFo's 12nm FD-SOI: why it makes headlines in China

Related News

• CEA‑Leti Advances European FD-SOI Innovation with GlobalFoundries’ Collaboration in the FAMES Pilot Line
• Quobly marks a new milestone towards industrialization with Soitec’s 28Si FD-SOI substrates now cycling in ST’s 300mm fab
• Soitec and CEA partner to develop automotive cybersecurity with advanced FD-SOI technology
• VeriSilicon Introduces FD-SOI Wireless IP Platform for Diverse IoT and Consumer Electronics Applications
• CEA-Leti and Soitec Announce Strategic Partnership to Leverage FD-SOI for Enhanced Security of Integrated Circuits