Abstract:
This paper presents a 28 Gb/s multistandard SerDes macro which is fabricated in TSMC 28 nm CMOS process. The transimpedance amplifier (TIA) base analog front-end achieved...Show MoreMetadata
Abstract:
This paper presents a 28 Gb/s multistandard SerDes macro which is fabricated in TSMC 28 nm CMOS process. The transimpedance amplifier (TIA) base analog front-end achieved 15 dB high-frequency boost with an on-chip compact passive inductor. The adaptation loop for the boost is decoupled from the decision feedback equalizer (DFE) adaptation by the use of a group delay algorithm. The DFE is a half-rate 1-tap unrolled design with only two total error latches for power and area reduction. A two-stage sense amplifier-based latch achieved sensitivity of 15 mV. The high-speed clock buffer uses a PMOS active inductor circuit with common-mode feedback to optimize the circuit performance. The transceiver achieves error-free operation at 28 Gbps with 34 dB channel loss, consumes the worst case power of 560 mW/lane, and fully complies with multiple standards and applications.
Published in: IEEE Journal of Solid-State Circuits ( Volume: 49, Issue: 12, December 2014)